PART |
Description |
Maker |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块 High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS Corporation
|
MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules High Power Diode Modules CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE TV 100C 100#22D SKT RECP Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
TM90RZ-24 TM90RZ-2H TM90EZ-24 TM90EZ-2H |
THYRISTOR MODULES HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
MDD26 |
HIgh Power Diode Modules
|
IXYS Corporation
|
MDD312 |
High Power Diode Modules
|
IXYS Corporation
|